Mechanisms for Long Carrier Lifetimes and High Detectivities from Novel Ga-free Narrow Gap III-V Semiconductor Superlattices

Presentations

• Ga-free InAs/InAsSb type-II superlattice and its applications to IR lasers and photodetectors

  COFFEE_KLATCH · Invited

  March 15, 2016, 8:00 AM – March 15, 2016, 8:36 AM

  Authors

  • Yong-Hang Zhang

    • Arizona State University

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• Field confinement using metasurfaces for increased-efficiency III-V infrared detectors

  Invited

  March 15, 2016, 8:36 AM – March 15, 2016, 9:12 AM

  Authors

  • David Peters

    • Sandia National Laboratories

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• Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

  COFFEE_KLATCH · Invited

  March 15, 2016, 9:12 AM – March 15, 2016, 9:48 AM

  Authors

  • Thomas Boggess

    • University of Iowa
    • The University of Iowa

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• Design of MWIR Type-II Superlattices for Infrared Photon Detectors

  COFFEE_KLATCH · Invited

  March 15, 2016, 9:48 AM – March 15, 2016, 10:24 AM

  Authors

  • Christoph Grein

    • University of Illinois at Chicago

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• Identification of Defect Candidates and their Effects on Carrier Lifetimes and Dark Currents in InAs/InAsSb Strained-Layer Superlattices for Infrared Detectors

  COFFEE_KLATCH · Invited

  March 15, 2016, 10:24 AM – March 15, 2016, 11:00 AM

  Authors

  • Nicholas Kioussis

    • Department of Physics, California State University Northridge
    • California State University, Northridge
    • Department of Physics and Astronomy, California State University, Northridge
    • Physics Department, Cal State Univ - Northridge

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