Coherent dynamics of Landau-Levels in modulation doped GaAs quantum wells at high magnetic fields

ORAL

Abstract

By using two-dimensional Fourier transform spectroscopy, we investigate the dynamics of Landau-Levels formed in modulation doped GaAs/AlGaAs quantum wells of 18 nm thickness at high magnetic fields and low temperature. The measurements show interesting dephasing dynamics and linewidth dependency as a function of the magnetic field. The work at USF and UAB was supported by the National Science Foundation under grant number DMR-1409473. The work at NHMFL, FSU was supported by the National Science Foundation under grant numbers DMR-1157490 and DMR-1229217. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

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Authors

  • Cunming Liu

    • University of South Florida

  • Jagannath Paul

    • University of South Florida

  • John Reno

    • CINT, Sandia National Laboratories

  • Stephen McGill

    • National High Magnetic Field Laboratory

  • David Hilton

    • University of Alabama at Birmingham

  • Denis Karaiskaj

    • University of South Florida