High $T_{\mathrm{IMT}}$ insulator-to-metal transition of the VO$_{\mathrm{2}}$ films on AlN/Si substrate.

Electronical and structural properties of the VO$_{\mathrm{2}}$ thin films are strongly affected by growth conditions and underlying substrate providing a flexibility of their functional parameters. We present a new VO$_{\mathrm{2}}$/AlN/Si heterostructure, where VO$_{\mathrm{2}}$ is characterized by an excellent insulator-to-metal transition (IMT) occurred at a higher temperature $T_{\mathrm{IMT}}$ than that typical for single crystals. Mentioned characteristics are associated with growth mechanism of the film and its epitaxial alignment with respect to the substrate. In particular, the $T_{\mathrm{IMT}}$ upshift in VO$_{\mathrm{2}}$/AlN/Si is explained by a stable crystallographic configuration in the plane of the VO$_{\mathrm{2}}$ film as well as a tensile deformation of a monoclinic $a$-axis formed by tilted and dimerized V$^{\mathrm{4+}}$-V$^{\mathrm{4+}}$, responsible for strong electron correlations. Moreover, proposed synergy of VO$_{\mathrm{2}}$ and Si is able to make new results for advanced materials fabrication and development of switching devices of new generation.