Quantum Hall Effect in Bernal-stacked tetralayer graphene

ORAL

Abstract

Bernal-stacked few layer graphene is of particular interest due to its unique tunable band~structure. Here we study the electric transport of Bernal-stack tetralayer graphene that are encapsulated by boron nitride sheets. The device shows a clear Landau fan with multiple Landau level crossing features. We will present the dependence of its quantum Hall properties on electric and magnetic fields, and compare with theoretical calculations.~

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Authors

  • Yanmeng Shi

    • Department of Physics and Astronomy, University of California Riverside, Riverside, CA 91765

  • Shi Che

    • Department of Physics and Astronomy, University of California Riverside, Riverside, CA 91765

  • Timothy Espiritu

    • Department of Physics and Astronomy, University of California Riverside, Riverside, CA 91765

  • Ziqi Pi

    • Department of Physics and Astronomy, University of California Riverside, Riverside, CA 91765

  • Takashi Taniguchi

    • National Insitute for Materials Science, 1-1 Namiki, Tsukuba, Japan

  • Kenji Watanabe

    • National Insitute for Materials Science, 1-1 Namiki, Tsukuba, Japan

  • Chun Ning Lau

    • Department of Physics and Astronomy, University of California Riverside, Riverside, CA 91765