Surface X-Ray Scattering Studies of TiSe$_2$ Thin Films Grown on Se-Terminated GaAs(111)B

ORAL

Abstract

Titanium Diselenide (TiSe$_2$) is a prototypical charge density wave (CDW) compound which transforms into a commensurate (2$\times$2$\times$2) superstructure upon cooling to below about 200 K. This transition is marked by substantial changes in the transport properties. Although this systems has been studied extensively, the underlying physical mechanism for the structural distortion is still under debate. Studying thin films of TiSe$_2$ provides a means to tune the electronic interactions through reduced dimension, and the effects on the CDW transition could provide valuable information about the mechanism. We have successfully grown TiSe$_2$ epitaxial films on Se-terminated GaAs(111)B substrates via MBE. The optimum growth condition has been determined, and the CDW order parameter has been measured as a function of temperature for different film thicknesses.

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Authors

  • Xinyue Fang

    • Department of Physics, University of Illinois at Urbana-Champaign

  • Hawoong Hong

    • Advanced Photon Source, Argonne National Lab

  • Yang Liu

    • Advanced Photon Source, Argonne National Lab

  • Shih-Chang Weng

    • Department of Physics, University of Illinois at Urbana-Champaign

  • Tai Chiang

    • Department of Physics, University of Illinois at Urbana-Champaign
    • University of Illinois at Urbana-Champaign
    • Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
    • University of Illinois