Extraordinary Inhibition of the Field-effect by Bound Quasiparticles at the Interface of a Dielectric and the Metal-Insulator Transition Material VO$_{2}$

An electric field applied normal to the interface of a dielectric and the prototypical, strongly-correlated semiconductor VO$_{2}$ is anticipated to lead to non-trivial phenomena. This field-effect allows for key insight into VO$_{2}$ physics. Field-effect modulation of channel current and carrier depletion in a field-effect device are found to be extraordinarily highly inhibited and no Metal-Insulator Transition is induced by the gate field for excess carriers up to 5x10$^{13}$cm$^{-2}$. The field-induced excess charge consists of bound quasi particles, as demonstrated by their activated and low excess carrier field-effect mobility. Small polarons as excess carriers in VO$_{2}$ consistently explain the observed field-effect, mobility and absence of depletion. The physics required to describe semiconducting VO$_{2}$'s$_{\, }$field-effect is fundamentally different from classical semiconductor physics.