The Evolution of Electronic Structure in Electron and Hole-Doped Sr2IrO4

ORAL

Abstract

How the electronic structure evolves in doped Mott insulators remains debated after decades of study, and affects the interpretations of many bulk and spectroscopic properties, including dc-conductance, quantum oscillations, etc. The recent discovery of the spin-orbital coupled J$=$1/2 Mott insulator Sr2IrO4 provides a new perspective into the above question. Combining angle-resolved photoemission spectroscopy and first-principles calculations, we present a unified description how the band dispersion, Fermi surface, chemical potential, and Mott gap changes in electron and hole doped Sr2IrO4.

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Authors

  • Yue Cao

    • University of Colorado at Boulder

  • Xiuwen Zhang

    • University of Colorado at Boulder

  • Haoxiang Li

    • University of Colorado at Boulder

  • Xiaoqing Zhou

    • University of Colorado at Boulder

  • Rajendra Dhaka

    • Swiss Light Source, PSI

  • Nicholas Plumb

    • Swiss Light Source, PSI

  • Tongfei Qi

    • University of Kentucky

  • Jasminka Terzic

    • University of Kentucky

  • Alex Zunger

    • University of Colorado at Boulder

  • Gang Cao

    • University of Kentucky

  • D. S. Dessau

    • University of Colorado at Boulder