Phase transition of MoS$_{2}$ using laser irradiation
POSTER
Abstract
The multi-layer 2H- MoS$_{2}$ flakes are transferred toSiO$_{2}$/Si substrate by mechanical exfoliation method and transformed into 1T-MoS$_{2}$ by Li intercalation. The phase change by Li doping leads semiconducting 2H-MoS$_{2}$ to metallic 1T-MoS$_{2}$ that is confirmed by Raman and PL spectroscopy and I-V measurements. Then, 1T-MoS$_{2}$ flakes are locally heated to recover to 2H-MoS$_{2}$ using 532nm-laser beam that can increase the irradiated power up to 10 mW. The characteristics of thermally patterned 2H-MoS$_{2}$ are investigated by confocal PL and photo-current and I-V measurements. Also, the junction characteristics of 2H- and 1T-MoS$_{2}$ flakes will be discussed further in this presentation.
*IBS-R011-D1