Effects of annealing conditions on the structural and electrical properties of a-oriented ZnO thin films

POSTER

Abstract

We studied the structural and optical properties of non-polar a-plane ZnO films grown on r-plane Al$_{\mathrm{2}}$O$_{\mathrm{3}}$ substrates by RF-sputtering with different annealing conditions and oxygen partial pressure. Epitaxial relationships between the ZnO films and Al$_{\mathrm{2}}$O$_{\mathrm{3}}$ substrates were determined by $\varphi $-scan to be ZnO[0001]//Al$_{\mathrm{2}}$O$_{\mathrm{3}}$[-1011], ZnO[1-100]//Al$_{\mathrm{2}}$O$_{\mathrm{3}}$[1-210]. Photoluminescence spectra showed that band gap depended on annealing times, which is sensitive to intrinsic emission and surface defects in the a-plane ZnO. Hall Effect were measured on all samples by a PPMS system to find the relations amount annealing times, carrier concentrations and mobilities.

Authors

  • C.W. Chang

    • National Sun Yat-Sen University, Taiwan

  • Q.Y. Chen

    • National Sun Yat-Sen University, Taiwan

  • P.V. Wadekar

    • University of Liverpool, UK

  • H.C. Huang

    • National Sun Yat-Sen University, Taiwan

  • C.F. Chang

    • National Sun Yat-Sen University, Taiwan

  • H.H. Ko

    • National Sun Yat-Sen University, Taiwan

  • W.C. Hseih

    • National Sun Yat-Sen University, Taiwan

  • C.H. Liao

    • ROC Military Academy, Taiwan

  • H.W. Seo

    • University of Arkansas, Little Rock, Arkansas, USA

  • W.K. Chu

    • University of Houston, Houston, Texas, USA

  • H.H. Liao

    • Enli Technology Inc., Taiwan