A top-down approach to prepare bismuth bi-layer terminated Bi$_2$Se$_3$(0001)

ORAL

Abstract

A bi-layer of bismuth (Bi) in the (111) plane possesses strong spin-orbit coupling and represents a prototype 2D topological insulator (TI). In this study, we propose a novel top-down approach to prepare Bi bi-layer on 3D TI Bi$_2$Se$_3$(0001). Combining scanning tunneling microscopy, X-ray crystal truncation rod analysis and Auger electron spectroscopy we demonstrate that under controlled exposure of Bi$_2$Se$_3$ to atomic hydrogen flux the selenium is removed from the topmost quintuple layer and a flat Bi bi-layer terminated Bi$_2$Se$_3$, with Bi$_2$Se$_3$-terrace-size lateral extension is achieved. Our results suggest new prospectives to manipulate the electronic properties of both Bi and Bi$_2$Se$_3$ TIs.

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Authors

  • Roozbeh Shokri

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany

  • Holger. L. Meyerheim

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany

  • Sumalay Roy

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany

  • Katayoon Mohseni

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany

  • Arthur Ernst

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany

  • Mikhail M. Otrokov

    • Departamento de F\'{\i}sica de Materiales UPV/EHU, Centro de F\'{\i}sica de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, Spain

  • Evgenii V. Chulkov

    • Departamento de F\'{\i}sica de Materiales UPV/EHU, Centro de F\'{\i}sica de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, Spain

  • J\"urgen Kirschner

    • Max-Planck-Institut f\"{u}r Mikrostrukturphysik, D-06120 Halle, Germany