MIS Solar Cell Devices Based on a Cu2O Substrate Utilizing h-BN as an Insulating and Passivating Layer
ORAL
Abstract
We demonstrate Cu$_{2}$O based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3\%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active cuprous oxide (Cu$_{2}$O) layer. The devices are the most efficient of any Cu$_{2}$O based MIS-Schottky solar cells reported to date.
*1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA. 2Materials Sciences Division, Lawrence Berkeley National Laboratory,Berkeley,CA,USA.Kavli Energy Nanosciences Institute at the University of Berkeley,CA,USA.
–