Electronic and photo-electronic transport in sputter deposited MoS$_{2}$ film

Here we report on the electrical transport as well as photo response of large area sputter deposited few-layers of thin MoS$_{2}$. Temperature dependent (55 K -275K) electronic conductivity measured on these samples show evidence of 2D Variable Range Hopping (2D-VRH) mechanism within 100K-275K. Photoconductivity measurements investigated using a continuous laser of $\lambda =$658nm (E$=$1.88eV), over a broad range of illuminating laser intensity, P (0.19$\mu $W \textless P \textless 11$\mu $W). The steady state photocurrent (I$_{\mathrm{ph}})$ indicates a fractional power dependence on laser intensity. The highest responsivities obtained in these films are found to be $\sim$ 0.2AW$^{-1}$.The frequency (with Laser pulse frequency range 1Hz-200Hz) dependent photocurrent will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI grant {\#} W911NF-11-1-0362 and NSF-PIRE OISE-0968405.