Electronic and optoelectronic properties of Few Layer MoS$_{2}$ Flake

We will report on the electronic and optoelectronic properties of few-layers flakes of MoS$_{2}$ obtained by mechanical exfoliation of bulk MoS$_{2}$ crystal. Measurements performed in field effect transistor (FET) geometry show a room temperature mobility $\mu _{\mathrm{FE}}$ $\sim$ 40cm$^{2}$V$^{-1}$s$^{-1}$. Temperature dependent (50K\textless T\textless 300K) photoconductivity measurements investigated using continuous laser of $\lambda =$658nm (E$=$1.88eV), over a broad range of illuminating laser intensity, P (0.1$\mu $W\textless P\textless 2$\mu $W) indicate a fractional power dependence of steady state photocurrent on P. Room temperature responsivity obtained in these samples were found to be $\sim$ 1AW$^{-1}$. Variation and/or dependence of these measured properties with respect to temperature will be presented and compared with similar measurements performed other layered 2D Transition Metal Dichalcogenides. This work is supported by the U.S. Army Research Office through a MURI grant {\#} W911NF-11-1-0362.