Temperature dependent photoconduction in atomically thin Layers of Indium Selenide

We will report on the photo response in few-layers of thin Indium Selenide (InSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Temperature dependent (20 K -300K) photoconductivity measurements investigated using a continuous laser of $\lambda =$658nm (E$=$1.88eV), over a broad range of illuminating laser power, P (0.1 $\mu $W \textless P \textless 4$\mu $W) indicate a power dependence of steady state photocurrent (I$_{\mathrm{ph}})$ on P (I $\sim$ P$^{\mathrm{\beta }}$ with $\beta $ $\sim$ 1). The highest responsivity obtained in these samples were $\sim$ 0.5AW$^{1}$. Variation and/or dependence of these measured properties with respect to temperature will be presented. The frequency (with Laser pulse frequency range 1Hz-200Hz) dependent photocurrent will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI grant {\#} W911NF-11-1-0362.