Linear magnetoresistance caused by mobility fluctuations in a bulk three-dimensional Dirac semi-metal, Cd$_{3}$As$_{2}$

ORAL

Abstract

Cd$_{3}$As$_{2}$ is a three-dimensional Dirac semi-metal with a variety of exciting transport properties such as exceedingly high mobility and an unusual non-saturating linear magnetoresistance. Given the fundamental interest in bulk band structure and potential for applications based on transport properties, understanding the transport~properties is crucial. We report magnetotransport and tunnel diode oscillation measurements on Cd$_{3}$As$_{2}$, in pulsed magnetic fields up to 65 T and temperatures between 1.5 K and 300 K. We study the unconventional non-saturating linear magnetoresistance up to 65 T and conclude that it is linked to disorder effects. Analysis of quantum oscillations in the magnetoresistance data allow us to further characterize the electronic state and discuss the bulk Fermi surface of Cd3As2.

*Work at Oxford supported by EPSRC, UK (EP/I004475/1, EP/I017836/1, EP/L001772/1) Work at Ames Laboratory supported by the U.S. DOE DMSE. Ames Laboratory is operated by the U.S. DOE and Iowa State University under Contract No. DE-AC02-07CH11358

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Authors

  • Arjun Narayanan

    • Oxford University

  • Matthew Watson

    • Oxford University

  • Samuel Blake

    • Oxford University

  • Yulin Chen

    • Oxford University

  • Dharmalingam Prabhakaran

    • Oxford University

  • Binghai Yan

    • Max-Planck-Institut fur Chemische Physik

  • Nicolas Bruyant

    • Laboratoire National des Champs Magnetiques Intenses

  • Lois Drigo

    • Laboratoire National des Champs Magn ``A''etiques Intenses

  • Igor Mazin

    • Naval Research Laboratory

  • Claudia Felser

    • Max-Planck-Institut fur Chemische Physik

  • Tai Kong

    • Ames Laboratory, Iowa State University

  • Paul Canfield

    • Ames Laboratory, Iowa State University

  • Amalia Coldea

    • Oxford University