Direct patterning and characterization of large area, single layer MoS$_{2}$ film synthesized by chemical vapor deposition

Molybdenum disulfide (MoS$_{2})$ has gained a significant amount of attention due to a great potential for atomic-film electronics. Recently chemical vapor deposition (CVD) method has been utilized to synthesize MoS$_{2}$ films, however, the synthesis of large area MoS$_{2}$ films still remains a challenge for practical device development. For the further utilization, existing synthetic approaches that can be used to fabricate large-area MoS$_{2}$ films require additional patterning processes, which may introduce unintentional contamination from other chemicals during the various processes. Therefore, it is required to directly prepare patterned, MoS$_{2}$ films during the CVD synthesis. In this presentation, we report a simple method for the synthesis of MoS$_{2}$ films that can be directly patterned during the synthesis, so that post-patterning processes can be avoided and device fabrication can be made simultaneously This study suggests that large-area, single-layer MoS$_{2}$ films can be synthesized by CVD and directly patterned for atomic-film electronic devices.