CVD-grown graphene on LaAlO$_3$/SrTiO$_3$: transferring, patterning and c-AFM lithography
ORAL
Abstract
Interesting properties are anticipated when graphene is integrated with complex-oxide heterostructures. To create these structures, single-layer graphene is grown by chemical vapor deposition and transferred onto LaAlO$_3$/SrTiO$_3$. following a deep UV exposure method, the size and position of the graphene can be patterned to be compatible with the c-AFM lithography technique applied on LaAlO$_3$/SrTiO$_3$. Local control of metal-insulator transition at LaAlO$_3$/SrTiO$_3$ interface is reversibly achieved using the c-AFM lithography technique without observable graphene degradation. The graphene layer can also serve as a top gate to modulate the LaAlO$_3$/SrTiO$_3$ interface conductance.
*We gratefully acknowledge support for this work from NSF (DMR-1124131 and DMR-1234096), ONR (N00014-13-1-0806) and AFOSR (FA9550-10-1-0524 and FA9550-12-1-0342)
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