Electrical contact of wurtzite GaN mircrodisks on \textit{p}-type GaN template
ORAL
Abstract
We developed a back processing to fabricate a secure electrical contact of wurtzite GaN microdisk on a transparent p-type GaN template with the orientation, [10-10]$_{\mathrm{disk}}$ // [10-10]$_{\mathrm{template}}$. GaN microdisks were grown on LiAlO$_{2}$ substrate by using plasma-assisted molecular beam epitaxy [1]. In the further study, we analyzed the TEM specimen of a sample with annealed GaN microdisk/p-typed GaN template by selection area diffraction (SAD) to confirm the alignment of the microdisks with the template at the interface. From the I-V measurements performed on the samples, we obtained a threshold voltage of $\sim$ 5.9 V for the current passing through the GaN microdisks with a resistance of $\sim$ 45 K$\Omega $. The electrical contact can be applied to the nanometer-scaled GaN light-emitting diode. \\[4pt] [1] I. Lo, et at., Appl. Phys. Lett, \textbf{105}, 082101 (2014).
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