Lateral hydrogenated graphene/h-BN Tunneling Magnetoresistance Devices

POSTER

Abstract

Based upon first principle calculations, we propose a practical heterostructure of hydrogenated graphene on the top of hexagonal-boron nitride, which exhibits ferromagnetic properties and relatively large spin orbit coupling. We propose to use this functional substrate for the lateral spin valve systems.

Authors

  • Shayan Hemmatiyan

    • Institut fuer Physik, Johannes Gutenberg Universitaet Mainz, D-55099-Dept of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA
    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA
    • Department of Physics, Texas A\&M University, College Station, TX 77843-4242

  • Cristian Cernov

    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA

  • Artem Abanov

    • Department of Physics, Texas A\&M University, College Station, Texas 77843-4242, USA

  • Marco Polini

    • NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore
    • NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore, I-56126 Pisa, Italy

  • Allan MacDonald

    • University of Texas at Austin
    • Department of Physics, The University of Texas at Austin
    • Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA

  • Jairo Sinova

    • Institut fuer Physik, Johannes Gutenberg Universitaet Mainz, D-55099 Mainz, Germany
    • Institut f\"ur Physik, Johannes Gutenberg Universit\"at Mainz, Mainz, Germany
    • Institut f\"ur Physik, Johannes Gutenberg Universit\"at Mainz, D-55099 Mainz, Germany