First principles study of the band gaps and edges of (111) epitaxially strained SrTiO$_3$
ORAL
Abstract
SrTiO$_3$ is a tunable material with potential use in energy applications. Previous experimental and first principles results demonstrated controllable manipulation of the electronic band gap in (001) biaxially strain, and predicted a large room-temperature band gap reduction (0.3 eV) for (111) epitaxial growth at small and large strains. In this work, we revisit and examine the effect of (111) epitaxial strain on the structural and electronic properties of SrTiO$_3$ using density functional theory calculations at low and room temperatures. Under (111) epitaxial strain at low temperature, we find that SrTiO$_3$ has an antiferrodistortive ground state at large compressive strains ($<$ -1\%) and a ferroelectric phase transition between -1\% $<$ $\eta$ $<$ 4\% biaxial strains. While structural distortions widen the band gap compared to the paraelectric phase, an effective reduction of band gap is observed for the distorted structure at large compressive strains compared to bulk. This work is supported by DOE, computational resources are provided by NERSC.
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