Superconducting single crystalline YBa2Cu3O7-$\delta $ on SrTiO3 buffered Si (100)

The growth of crystalline oxides on semiconductors enables new functionalities to be integrated with semiconducting technologies. Here, thin films of optimally-doped (001)-oriented YBa2Cu3O7-$\delta $ are epitaxially integrated on silicon (001) through growth on a SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables very high transition temperatures to be achieved. For a 30 nm thick SrTiO3 buffer, YBa2Cu3O7-$\delta $ films exhibiting a transition temperature of $\sim$ 95 K, and a narrow transition width (\textless 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-$\delta $ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.