Focus Session: Dopants and Defects in III-V Nitrides

Presentations

• Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

  ORAL

  March 3, 2015, 8:00 AM – March 3, 2015, 8:12 AM

  Authors

  • Denis Demchenko

    • Virginia Commonwealth University

  • Michael Reshchikov

    • Virginia Commonwealth University

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• Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

  ORAL

  March 3, 2015, 8:12 AM – March 3, 2015, 8:24 AM

  Authors

  • Normand Modine

    • Sandia National Laboratories

  • Alan Wright

    • Sandia National Laboratories

  • Stephen Lee

    • Sandia National Laboratories

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• Defect identification in semiconductors with positron annihilation: experiment and theory

  COFFEE_KLATCH · Invited

  March 3, 2015, 8:24 AM – March 3, 2015, 9:00 AM

  Authors

  • Filip Tuomisto

    • Aalto University

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• The role of surface kinetics on defect generation and propagation during epitaxy of WBG semiconductors

  ORAL

  March 3, 2015, 9:00 AM – March 3, 2015, 9:12 AM

  Authors

  • Angel Yanguas-Gil

    • Argonne Natl Lab

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• Dilute-P GaNP Semiconductor Alloy for Visible Light Emitter

  ORAL

  March 3, 2015, 9:12 AM – March 3, 2015, 9:24 AM

  Authors

  • Chee-Keong Tan

    • Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University

  • Nelson Tansu

    • Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University

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• The donor-acceptor relationship in HVPE GaN:Fe Substrates

  ORAL

  March 3, 2015, 9:24 AM – March 3, 2015, 9:36 AM

  Authors

  • Ustun Sunay

    • University of Alabama at Birmingham

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• The Role of Oxygen on the Nature and Stability of Eu Centers in Eu doped Gallium Nitride

  ORAL

  March 3, 2015, 9:36 AM – March 3, 2015, 9:48 AM

  Authors

  • Brandon Mitchell

    • Department of Physics and Astronomy, University of Mt. Union, 1972 Clark Ave, Alliance, OH, 44601, USA

  • Dolf Timmerman

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Zhu Wiaxing

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Junichi Takatsu

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Masaaki Matsuda

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Katharina Lorenz

    • Instituto Superior T\'ecnico, Campus Tecnol\'ogico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal

  • Eduardo Alves

    • Instituto Superior T\'ecnico, Campus Tecnol\'ogico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal

  • Atsushi Koizumi

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Yasufumi Fujiwara

    • Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

  • Volkmar Dierolf

    • Department of Physics and Astronomy, Lehigh University, 16 Memorial Dr. E, Bethlehem, PA, 18015, USA

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• Computational nano-material design of exotic luminescent materials based upon europium doped gallium nitrides

  ORAL

  March 3, 2015, 9:48 AM – March 3, 2015, 10:00 AM

  Authors

  • Akira Masago

    • Osaka Univ
    • Graduate School of Engineering Science, Osaka University

  • Tetsuya Fukushima

    • Graduate School of Engineering Science, Osaka University
    • Osaka Univ
    • Osaka University

  • Kazunori Sato

    • Graduate School of Engineering, Osaka University

  • Hiroshi Katayama-Yoshida

    • Osaka Univ
    • Osaka University
    • Graduate School of Engineering Science, Osaka University

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• Stabilization of free-standing GaN foils by threading edge dislocations

  ORAL

  March 3, 2015, 10:00 AM – March 3, 2015, 10:12 AM

  Authors

  • Roman Gr\"oger

    • Institute of Physics of Materials and CEITEC IPM, Academy of Sciences of the Czech Republic

  • Lucien Leconte

    • Universit\'e Lille 1, France

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• Atomic and electronic structures of (GaN)$_{1-x}$(ZnO)$_x$ alloys: the role of short-range order

  ORAL

  March 3, 2015, 10:12 AM – March 3, 2015, 10:24 AM

  Authors

  • Jian Liu

    • State Univ of NY- Stony Brook

  • Philip Allen

    • Stony Brook University
    • State Univ of NY- Stony Brook

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• EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method

  POSTER

  March 3, 2015, 10:24 AM – March 3, 2015, 10:36 AM

  Authors

  • J. Dashdorj

    • Univ of Alabama - Birmingham

  • M.E. Zvanut

    • Univ of Alabama - Birmingham

  • M.M. Bockowski

    • Institute of High Pressure Physics, Poland

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