Effect of C6$+$ Ion Irradiation on structural and electrical properties of Yb and Eu doped Bi1.5Zn0.92Nb1.5O6.92 pyrochlores

Pyrochlore general formula of A$_{2}$B$_{2}$X$_{7}$ where A and B are cations and X is an anion Pyrochlore compounds exhibit semiconductor, metallic or ionic conduction properties, depending on the doping, compositions/ substituting variety of cations and oxygen partial pressure. Ion beam irradiation can induce the structural disordering by mixing the cation and anion sublattices, therefore we aim to inevestigate effects of irradiation in pyrochlore compounds. In this study, Eu and Yb-doped Bi$_{1.5}$Zn$_{0.92}$Nb$_{1.5}$O$_{6.92}$ (Eu-BZN, Yb-BZN) Doping effect and single phase formation of Eu-BZN, Yb-BZN was characterized by X-ray diffraction technique (XRD). Radiation-induced effect of 85 MeV C$^{6+}$ ions on Eu-BZN, Yb-BZN was studied by XRD, scanning electron microscopy (SEM) and temperature dependent dielectric measurements at different fluences. XRD results revealed that the ion beam-induced structural amorphization processes in Eu-BZN and Yb-BZN structures. Our results suggested that the ion beam irradiation induced the significant change in the temprature depndent dielectric properties of Eu-BZN and Yb-BZN pyrochlores due to the increased oxygen vacancies as a result of cation and anion disordering.