Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

ORAL

Abstract

Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

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Authors

  • Salman Kahn

    • UC Berkeley
    • Department of Physics, University of California, Berkeley

  • Jairo Velasco Jr

    • Department of Physics, University of California, Berkeley

  • Long Ju

    • Department of Physics, University of California, Berkeley

  • Dillon Wong

    • Department of Physics, University of California, Berkeley

  • Juwon Lee

    • Department of Physics, University of California, Berkeley

  • Hsin Zon Tsai

    • Department of Physics, University of California, Berkeley

  • Takashi Taniguchi

    • Advanced Materials Laboratory, National Institute for Materials Science

  • Kenji Watanabe

    • Advanced Materials Laboratory, National Institute for Materials Science

  • Alex Zettl

    • Department of Physics, University of California, Berkeley

  • Feng Wang

    • Department of Physics, University of California, Berkeley

  • Michael Crommie

    • Department of Physics, University of California, Berkeley