Magneto-photoluminescence study of InAs quantum dots emitting at 1150nm

Self-assembled InAs/GaAs quantum dots are frequently designed to emit light in the range of 920-980nm, and the spectroscopic characterization of neutral and charged excitons in this range is well understood. We study the magnetic field dependence of low-temperature photoluminescence from InAs self-assembled quantum dots emitting close to 1 eV (1150 nm). The dots are incorporated into a field-effect device to map out the fine structure of charged and neutral excitons using magneto-photoluminescence spectroscopy in the Faraday geometry up to 7 Tesla. Previously developed models of Coulomb blockade and fine structure in InAs/GaAs QDs can be extended to measure the effective g-factor of the exciton complexes in these lower-energy quantum dots.