Electron transport in graphene with uniaxial local strain

Strain engineering is a promising method for controlling electron transport in graphene; Spatial variation of pseudo-vector potential and pseudo-scalar potential induced by lattice strain modulate transport property of graphene. We have succeed in fabricating a graphene FET with uniaxial local strain, and observed clear deformation in gate voltage dependence of conductivity ($\sigma-V_g$ curve). From a comparison with numerical calculation, we conclude that strain-induced scalar potential is responsible for the deformation of the $\sigma-V_g$ curve.