Electronic and optoelectronic devices based on chirality-enriched wafer-scale single-wall carbon nanotube thin films

The unique and rich material properties of single-wall carbon nanotubes (SWCNTs) make them attractive for nano-electronic and optoelectronic applications. Slight changes in tube diameter and wrapping angle, defined by the chirality indices ($n$,$m$), can dramatically modify the bandstructure, which can be utilized for designing devices with tailored properties. However, it remains to be a challenge to fabricate macroscopic, single-chirality devices. Here, we introduce a simple way of producing chirality-enriched wafer-scale SWCNT films by combining recently developed solution-based polymer-modified sorting method\footnote{C. Y. Khripin {\it et al.}, JACS \textbf{18}, 6822 (2013)} and vacuum filtration. The produced thin films can be easily transferred onto any substrate to have a CMOS compatible wafer. We fabricated a transistor of (6,5)-enriched SWCNTs with an on/off ratio $>$10$^3$. Large-scale photothermoelectric-effect-based and photovoltaic-effect-based photodetectors made of (6,6)- and (6,5)-enriched films, respectively, will also be discussed.