Electronic structure, spin--orbit coupling, and interlayer interaction in bulk MoS$_2$ and WS$_2$

ORAL

Abstract

Transition metal dichalcogenides (TMDs) (MX$_2$ where M = Mo or W and X = S, Se, or Te) are theorized to possess unique spin-split valence bands along with rare spin--valley coupling, making them attractive for applications within the growing fields of spintronics and valleytronics. Despite the importance of the split valence band that governs the unique spin- and valley-physics of TMDs, there remain many questions regarding its origin and properties in bulk TMDs. In this talk, I will present high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements of the electronic band structure of bulk TMDs MoS$_2$ and WS$_2$. Detailed comparison with first principle calculations will be shown. The role of the valence band splitting and how it can be controlled will be discussed.

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Authors

  • Drew Latzke

    • University of California, Berkeley and Lawrence Berkeley National Laboratory

  • Wentao Zhang

    • University of California, Berkeley and Lawrence Berkeley National Laboratory

  • Sefaattin Tongay

    • Arizona State University

  • Tay-Rong Chang

    • National Tsing Hua University

  • Hsin Lin

    • National University of Singapore

  • Horng-Tay Jeng

    • National Tsing Hua University and Academia Sinica

  • Aslihan Suslu

    • Arizona State University

  • Junqiao Wu

    • University of California, Berkeley and Lawrence Berkeley National Laboratory

  • Arun Bansil

    • Northeastern University

  • Alessandra Lanzara

    • University California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • Materials Sciences Division, Lawrence Berkeley National Laboratory / Department of Physics, UC Berkeley
    • University of California, Berkeley and Lawrence Berkeley National Laboratory