Resistive Switching Behaviour of SrCoO$_{x}$ thin films

Resistance random access memory using metal-oxide insulator-metal structure is attracting considerable attention due to their potential high scalability and low switching current. The resistance switching behavior in many oxides is suggested to associate with local oxygen migration. An insulating brownmillerite SrCoO$_{\mathrm{2.5}}$ has been found to transform topotactically to conducting perovskite SrCoO$_{\mathrm{3}}$, due to the easy oxygen migration even at room temperature. Therefore, the SrCoO$_{x}$ offers a great opportunity to study the switching mechanism based on local oxygen migration. In this report, we succeed to fabricate TE/SrCoO$_{x}$/BE/SrTiO$_{\mathrm{3}}$ devices. The fabrication process covered the 100 nm SCO on 50 nm patterened bottom electrode using pulsed laser deposition. Furthermore, the 80 nm top electrodes by litography patterning was deposited using e-beam evaporator metal deposition. From the TE/SCO/BE memory cell we observed resistance switching with some evidence of conducting filament. We discuss the switching mechanism through the analysis of composition, structure, and dimension of the filaments.