Ballistic interference in ultraclean suspended monolayer graphene

We have developed a versatile technology that allows to suspend graphene and complement it with arbitrary bottom and top-gate structures. Using current annealing we demonstrate exceptional high mobililties in monolayer graphene approaching $100$ m$^2$/Vs. These suspended devices are ballistic over micrometer length scales and display intriguing interference patterns in the electrical con-ductance when different gate potentials are applied. Specifically we will discuss different types of Fabry-Perot resonances that appear in different gate voltage regimes of ballistic pn devices [1]. We will go beyond our recent publication [1] and also show electric transport measurements in magnetic field, where intriguing features appear in the intermediate field range in between the low-field Klein-tunneling regime and the quantum Hall regime. We observe a large number of non-dispersing states which might be due to so-called snake states confined to the pn interface. We will also discuss first results on electron guiding in ultraclean monolayer graphene.\\[4pt] [1] P. Rickhaus et al., Nature Communications 4, 2342 (2013)