Electrical Transport and Photoresponse of Field-Effect Transistors Based on Two-Dimensional Metal-Layered Materials

High performance field effect transistors based on exfoliated two-dimensional (2D) layered materials of transition metal dichalcongenides (TMDCs) such as MoS$_{2}$, WSe$_{2}$ and MoSe$_{2}$ have been demonstrated. The electrical transport measurements show that the mobility is associated with the thickness and temperature for mono- and few-layered 2D materials. Besides, these 2D materials are demonstrated highly sensitive to the light, providing the potential applications for photodetectors or optoelectronic devices. In addition, the thickness dependence of noise measurement for these 2D materials will also be discussed.