Local Gating of Carbon Nanotube inside TEM
ORAL
Abstract
We report a new method of fabricating ultra-clean and hysteresis-free multi-wall carbon nanotube field-effect transistor (CNFET) inside an ultra-high vacuum transmission electron microscopy (TEM) equipped with a movable Au tip as a local gate. Local gating of CNFET is demonstrated concurrently with atomic-scale imaging. The development of the ambipolar characteristic of CNFET, the Vds effect on CNFET as well as the localized characteristics of CNFET have been investigated.
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