Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

ORAL

Abstract

We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

*the US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (W.S.) and by AFOSR Grant No. FA9550-12-1-0479 (D.X.).

Authors

  • Wenyu Shan

    • Department of Physics, Carnegie Mellon University
  • Haizhou Lu

    • Department of Physics and Centre of Theoretical and Computational Physics, University of Hong Kong
  • Di Xiao

    • Department of Physics, Carnegie Mellon University