Superconductivity at 82K in half-unit-cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$

ORAL

Abstract

We report an experimental study of superconductivity in high quality single crystal Bi2212 down to half-unit-cell thick in the form of graphene/Bi2212 heterostructure. Sharp superconducting transitions were always observed above liquid nitrogen temperature (77 K). Thickness dependent T-linear $\rho$ behavior in Bi2212 was found to be related to the superconductor-insulator quantum phase transition (S-I QPT) in 2D superconductor. The S-I QPT was supposed to occur in the disordered boson system as the critical sheet resistance equaled to the quantum resistance for pairs h/4e2 (6.45k$ \Omega$) according to our experiments. Our research revealed that besides protecting the underlying Bi2212, graphene might have helped in damping the 2D fluctuation in Bi2212.

*The work is supported by the ``Strategic Priority Research Program (B)'' (XDB04010400, 04040300 and 04020000), NSTMP (2011ZX02707), NSFC (11104303, 11274333, 11204339, 11104335, and 61136005) and 12JC1410100, 12JC1403900 2011CBA00107 and 2012CB921302

Authors

  • Da Jiang

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Tao Hu

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Qiao Li

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Lixing You

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Ang Li

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Haomin Wang

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Gang Mu

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Zhiying Chen

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Haoran Zhang

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Guanghui Yu

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Xiaoming Xie

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Mianheng Jiang

    • State Key Laboratory of Functional Materials for Informatics, SIMIT, CAS, Shanghai, China
  • Jie Zhu

    • IPOE, School of Physics science and Engineering, Tongji University, Shanghai, China
  • Qiujuan Sun

    • State Key Laboratory of Functional Materials for Informatics; SPE, Central South University, Changsha, China
  • Chengtian Lin

    • Max-Planck-Institut f\"ur Festk\"orperforschung, Stuttgart, Germany
  • Hong Xiao

    • Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing, China