Electronic band gaps and transport in aperiodic graphene-based superlattices of Thue-Morse sequence
ORAL
Abstract
We investigate electronic band structure and transport properties in aperiodic graphene-based superlattices of Thue-Morse (TM) sequence. The robust properties of zero-$\overline{k}$ gap are demonstrated in both mono-layer and bi-layer graphene TM sequence. The Extra Dirac points may emerge at $k_{y}\ne$0, and the electronic transport behaviors such as the conductance and the Fano factor are discussed in detail. Our results provide a flexible and effective way to control the transport properties in graphene-based superlattices.
*This work is supported by NSFCs (Nos. 11274275, 11104014 and 61078021), Research Fund for the Doctoral Program of Higher Education 20110003120007, SRF for ROCS (SEM), and the National Basic Research Program of China (No. 2011CBA00108, and 2012CB921602).
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