Electronic Indication of Three-Dimensional Dirac Cone in Cd3As2 from Angle-Resolved Photoemission
ORAL
Abstract
The narrow gap semiconductor, Cd3As2 is well known to have inverted band structure. It draws much attention recently because of its none-trivial properties which is predicted to be a three-dimensional Dirac semi-metal. Analogous to two-dimensional layered material graphene, Cd3As2 can be viewed as a 3D version of Dirac Fermion material whose bulk conduction and valence band contact only at discrete (Dirac) points in the Brillouin zone and disperse linearly in all directions around these critical points. Here we report direct observation of three-dimensional Dirac cones in Cd3As2 by using high resolution angle resolved photoemission spectroscopy(ARPES). Our ARPES results reveal the unique band structures for this topological 3D Dirac material that will provide key information in understanding and exploring exotic phenomenon in Cd3As2.
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Authors
H.M. Yi
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
C.Y. Chen
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Y.G. Shi
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Z.J. Wang
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Z.J. Xie
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Y. Feng
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
A.J. Liang
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
S.L. He
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
J.F. He
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Y.Y. Peng
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
X. Liu
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Y. Liu
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
L. Zhao
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
G.D. Liu
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
X.L. Dong
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
J. Zhang
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Arita M
HiSor, Hiroshima University, Hiroshima 739-8526, Japan
Shimada K
HiSor, Hiroshima University, Hiroshima 739-8526, Japan
Namatame H
HiSor, Hiroshima University, Hiroshima 739-8526, Japan
Taniguchi M
HiSor, Hiroshima University, Hiroshima 739-8526, Japan
Z.Y Xu
IPC, CAS, Beijing 100190, China
C.T. Chen
IPC, CAS, Beijing 100190, China
X. Dai
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
Z. Fang
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China
X.J. Zhou
Beijing National Laboratory for Condensed Matter Physics, IOP, CAS, Beijing 100190, China