Structural and electrical properties of strained La-doped SrTiO$_{3}$ films

Structural and electrical properties of La-doped thin (10nm and 20nm) SrTiO$_{3}$ films are investigated. Films with three different La doping concentrations (5, 15 and 25{\%}) are grown by molecular beam epitaxy. Epitaxially strained La-doped SrTiO$_{3}$ films were grown on four different substrates, LaAlO$_{3}$(100), (LaAlO$_{3})_{0.3}$(Sr$_{2}$AlTaO$_{6})_{0.7}$(100), SrTiO$_{3}$(100) and DyScO$_{3}$(110), in order to have different strain conditions. We compare the structural properties of La-doped SrTiO$_{3}$ films using X-ray diffraction as a function of strain and La dopant concentrations. We also determine the electrical properties of strained La-doped films using Hall measurements, electrical resistivity and mobility at room temperature.