A stable path to ferromagnetic hydrogenated-graphene growth
ORAL
Abstract
Based upon first principle calculations, we present results that indicate the presence of a preferential site on one sublattice for hydrogen adsorption due to the screening effect of hexagonal boron nitride (h-BN). Our results show the effect of h-BN increases the hydrogen migration barrier on top of graphene. We propose a functional heterostructure as a TMR device, which is exploiting the screening effect caused by h-BN and the insulating properties of this exotic 2-D material. The density of states (DOS) calculations, with 1, 2 and 3 h-BN layers sandwiched in between two layers of graphone, show a half metallic state for these new heterostructures.
*NRI, SWAN, SRC
–
Authors
Shayan Hemmatiyan
Department of Physics, Texas A\&M University, College Station, TX 77843-4242, USA
Marco Polini
NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore, I-56126 Pisa, Italy
NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy
Allan MacDonald
The University of Texas at Austin
Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA
Department of Physics, The University of Texas at Austin, Austin, TX, 78712
Department of Physics, University of Texas at Austin
University of Texas at Austin
University of Texas at Austin, Austin, Texas 78712, USA
UT Austin
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
Jairo Sinova
Dept of Physics, Texas A\&M University, College Station, TX 77843-4242, USA- Institut f\"ur Physik, Johannes Gutenberg Universit\"at Mainz Staudinger
Texas A\&M University, College Station, Texas 77843, USA
