Mechanism of excitonic dephasing in layered InSe crystals
ORAL
Abstract
The dephasing and lifetime of excitons in InSe layered crystals has been carefully measured using three pulse four-wave mixing and two-dimensional Fourier transform (2DFT) spectroscopy. We obtain a complete and detailed picture of the mechanism of excitonic dephasing in this layered material. The temperature dependence provides a detailed description of the phonon-exciton interactions and the zero Kelvin limit of the homogeneous linewidth. The excitation density dependence reveals strong excitation induced dephasing due to exciton-exciton scattering.
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