Direct CVD Growth of Monolayer Graphene on Exfoliated BN on SiO$_{2}$

POSTER

Abstract

Graphene on BN exhibits exceptionally high charge carrier mobility, which makes it promising for future device applications. However, current CVD methods of growing graphene on a catalytic metal surface require a chemical transfer process onto BN substrate, which introduces polymers and etchants that can contaminate the surface of pristine graphene. Here, we present a method for directly growing graphene on BN, a non-catalytic surface. This method not only eliminates the undesirable transfer process, but also successfully grows clean graphene with well-defined edges. We performed Raman spectroscopy and atomic force microscopy, which showed a high coverage of monolayer graphene with low D peak and single hexagonal graphene domains of sub-micron size.

Authors

  • Han Sae Jung

    • University of California, Berkeley

  • Hsin-Zon Tsai

    • University of California, Berkeley

  • Erik Piatti

    • Politecnico di Torino

  • Kacey Meaker

    • University of California, Berkeley

  • Jairo Velasco

    • Deptartment of Physics, Universtiy of California, Berkeley
    • Univ of California - Berkeley
    • University of California, Berkeley

  • Alex Zettl

    • University of California, Berkeley

  • Michael Crommie

    • UC Berkeley, Physics; LBNL
    • UC Berkeley, Dept of Physics; Materials Science Division, LBNL
    • UC Berkeley physics/ LBNL MSD
    • Univ of California - Berkeley
    • University of California, Berkeley
    • UC Berkeley Physics Dept. and LBL Materials Sciences Division
    • University of Carlifornia at Berkeley