Low-energy electron diffraction study of Si(111)-($\surd $3x$\surd $3)R30$^{\circ}$ -B

Metal-semiconductor interfaces are important for the function and manufacture of advanced electronics, such as those used in computers, tablets and phones.~ They also exhibit many interesting physical phenomena that are interesting from a fundamental point of view, including exotic phases and phase transitions.\footnote{Gonz\'{a}lez, Guo, Ortega, Flores, Weitering. Phys. Rev. Lett. \textbf{102}, 115501 (2009)} This study involves the analysis and modeling of the surface structure of a thin film of boron on the Si(111) surface.~ The addition of metal atoms to the surface of Si(111) simplifies its structure by removing a ``rippling'' that is present on the clean surface.~ The low-energy electron diffraction (LEED) data were measured at a surface temperature of 80 K at ORNL. The LEED analysis utilized the SATLEED analysis programs. The results are similar to those obtained in an earlier LEED study for this interface, but the precision is higher due to the larger dataset employed.\footnote{P. Baumgartel \textit{et al.} Phys Rev B. \textbf{59} (1999)}$^,$\footnote{H. Huang, S. Y. Tong, W. S. Yang, H. D. Shih, F. Jona. Phys Rev B. \textbf{41 }(1990)} The results of this study will be compared to other studies of this and similar systems. We acknowledge the Eberly College of Science for funding this project.