Growth of topological insulator Bi$_{2}$Se$_{3}$ thin films on amorphous for multi-channel structure

A topological insulator exhibits the topologically protected gapless Dirac surface states in bulk band gap which was predicted in Bi$_{2}$Se$_{3}$. Thin layered films of Bi$_{2}$Se$_{3}$ have been heteroepitaxially grown on the crystalline substrate by molecular beam epitaxy (MBE). Here, we show the growth of Bi$_{2}$Se$_{3}$ thin films on amorphous SiO$_{2}$ substrate by MBE. In order to achieve the growth on amorphous surface, van der Waals epitaxy method with the selenium passivation was adopted. Bi$_{2}$Se$_{3}$ films are grown along [001] direction with periodical structure in spite of lattice mismatched amorphous substrate. Low-temperature transport measurement revealed the weak anti-localization effect with electrical gating, which suggest that surface transport properties can be comparable to those of epitaxially grown Bi$_{2}$Se$_{3}$ films on crystalline substrate. In addition, we demonstrate the growth of multi-channel Bi$_{2}$Se$_{3}$ films separated by amorphous insulating layer. These results provide a potential of growth of layered topological insulator films on amorphous materials and junctions.