Transport Properties of Topological 1D Zero-Line Mode in Graphene

ORAL

Abstract

When the inversion symmetry of graphene systems is broken, e.g. graphene subjected to a staggered sublattice potential or bilayer under an applied interlayer potential difference, a bulk band gap opens to support the quantum valley-Hall state. When the potential varies spatially, a topological one-dimensional conducting channel is formed along the zero-line of the potential. We find that such a state shows the property of zero bend resistance. And if two straight zero lines crosses, we show that the splitting of the zero line mode obeys a counterintuitive current partition law. We provide a theory to understand the physics behind these novel characteristics.

–

Authors

  • Zhenhua Qiao

    • University of Science and Technology of China, Hefei, Anhui 230026, China

  • Jeil Jung

    • National University of Singapore, Singapore
    • Graphene Research Centre and Department of Physics, National University of Singapore
    • National University of Singapore

  • Chungwei Lin

    • Department of Physics, University of Texas at Austin
    • University of Texas at Austin, Austin, Texas 78712, USA

  • Allan MacDonald

    • The University of Texas at Austin
    • Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA
    • Department of Physics, The University of Texas at Austin, Austin, TX, 78712
    • Department of Physics, University of Texas at Austin
    • University of Texas at Austin
    • University of Texas at Austin, Austin, Texas 78712, USA
    • UT Austin
    • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • Qian Niu

    • University of Texas at Austin
    • UT Austin
    • Department of Physics, University of Texas at Austin
    • University of Texas at Austin, Austin, Texas 78712, USA
    • The University of Texas at Austin
    • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA