Electrostatic phase control of half-doped manganites

In perovskite manganites as a strongly correlated electron system, the cross correlation among charge-spin-orbital degrees of freedom provides various electronic phases which have been controlled by external stimuli such as a magnetic field and light. Especially, the electric-field induced switching of electronic phases is of critical importance for the application toward future electronics. In this presentation, we demonstrate the gate control of the phase transition of manganites in the field effect transistor. From the variety of manganites, we chose the half-doped system of Pr$_{0.5}$Sr$_{0.5}$MnO$_3$, which is on the nearly vertical phase boundary between a ferromagnetic metallic phase and an anti-ferromagnetic insulating phase. By adopting the electric double layer transistor, we realized the phase switching accompanying with the huge resistance change by the slight modulation of the gate voltage, which may lead to beyond CMOS devices.