Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields
ORAL
Abstract
We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.
*We acknowledge support through the DOE BES, the Gordon and Betty Moore Foundation, Keck Foundation, NSF, and MRSEC. A portion of this work was performed at the National High Magnetic Field Laboratory.
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Authors
M.A. Mueed
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Dobromir Kamburov
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Mansour Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Princeton Univ
L.N. Pfeiffer
Princeton University
Princeton Univ
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Department of Electrical Engineering, Princeton University
K.W. West
Princeton University
Princeton Univ
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Kirk Baldwin
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Princeton Univ
Princeton University
J.J.D. Lee
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
Roland Winkler
Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA