Coupling ZnSe band spin states and 4H-SiC defect spin states across their interface

ORAL

Abstract

Point defects in silicon carbide (SiC) have emerged as a promising platform for quantum information processing and nanoscale sensing in a technologically-mature semiconductor. ZnSe is a promising candidate for semiconductor spintronic applications and has selection rules compatible with optical orientation of conduction electron spins. We combine pump-probe optical measurements with pulsed optically detected magnetic resonance (ODMR) sequences to investigate coupling between SiC defect spins and ZnSe conduction electron spins in ZnSe/4H-SiC heterostructures. Preparation of these structures by molecular beam epitaxy (MBE) and ion implantation is discussed in terms of interface optimization.

*This work is supported by NSF, ONR and AFOSR.

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Authors

  • Andrew L. Yeats

    • Institute for Molecular Engineering, University of Chicago
    • Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637

  • Anthony Richardella

    • Physics Department, Pennsylvania State University
    • Dept. of Physics, Penn State University
    • Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park, PA 16802

  • Nitin Samarth

    • Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park, PA 16802

  • D.D. Awschalom

    • University of Chicago and UC Santa Barbara
    • Institute for Molecular Engineering, University of Chicago
    • Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637
    • Institute for Molecular Engineering, University of Chicago, Chicago, IL 60652
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA, 93106
    • University of Chicago - Institute for Molecular Engineering
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA