STM study of monolayer MoS$_{2}$ synthesized by Chemical Vapor Deposition

Monolayer molybdenum disulfide (MoS$_{2})$, an atomically thin transition-metal dichalcogenide semiconductor with a direct band gap, as opposed to an indirect band gap in bulk MoS$_{2}$, has recently captured a lot of research interest for its distinctive optical and electronic properties, and potential applications such as field effect transistors, optoelectronic devices and chemical sensors. Using scanning tunneling microscopy, we have investigated monolayer MoS$_{2}$ synthesized by chemical vapor deposition. The structural and electronic properties of monolayer MoS$_{2}$ grown on glassy carbon and other substrates will be presented. We will also discuss our preliminary scanning tunneling spectroscopy measurements on these samples.