Quasiballistic hole transport in Ge/Si core/shell nanowires

ORAL

Abstract

We investigate low temperature hole transport in Ge/Si core/shell nanowires. We study devices with annealed (Ni) and unannealed (Ti/Al) contacts. We observe Coulomb blockade and analyze the capacitive and quantum energy scales in Ge/Si nanowire quantum dots. In devices with Ni contacts, we study diameter and shell thickness dependence on hole mobility at low temperature. We observe Fabry-Perot oscillations indicating a quasi-ballistic transport regime. We also investigate subband-resolved transport of holes as a function of magnetic field magnitude and orientation.

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Authors

  • Dharmraj Kotekar Patil

    • Univ of Pittsburgh

  • Zhaoen Su

    • Univ of Pittsburgh

  • Binbin Tian

    • Univ of Pittsburgh

  • Minh Nguyen

    • Centre for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos 87545, USA

  • Jinkyoung Yoo

    • Centre for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos 87545, USA

  • Shadi Dayeh

    • Centre for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos 87545, USA

  • Sergey Frolov

    • Univ of Pittsburgh