Observation of microwave-induced resistance oscillations in high-mobility 2D hole gas in sGe/SiGe quantum wells

ORAL

Abstract

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. In this talk we report on the observation of MIRO in a very different setting, a 2D hole gas hosted in strained Ge/SiGe quantum wells. These findings demonstrate that MIRO is a universal phenomenon and that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

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Authors

  • Q.A. Ebner

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • P.D. Martin

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • Q. Shi

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • M.A. Zudov

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • O.A. Mironov

    • University of Warwick, Coventry, CV4 7AL, UK

  • R.J.H. Morris

    • University of Warwick, Coventry, CV4 7AL, UK

  • D.R. Leadley

    • University of Warwick, Coventry, CV4 7AL, UK