Properties of field-effect transistors of CVD grown MoS$_2$ single atomic layers on CVD grown hexagonal Boron Nitride
ORAL
Abstract
Two dimensional crystalline layered materials such as MoS$_2$, WS$_2$, have recently become an intense focus of research activities due to their exceptional electronic and optical properties. A single- or a few atomic layers of these materials show quite promising charge conduction characteristics, such as large mobility or fast on/off switch ratios, which lead to a few recent examples of integrated circuits based on these materials. Here, we will present a comparison among the electronic transport properties of, either mechanically exfoliated or CVD grown MoS$_2$ under different substrates, i.e. on SiO$_2$, on exfoliated or on CVD grown h-BN, and suspended. We will also discuss results obtained from back and top gated configurations with different dielectrics.
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